• SiC Physical & Electronic Properties
• III Nitride Epitaxy Technology
• Materials Documentation

Materials

Cree pushes the envelope in semiconductor materials technology. We provide substrates and epitaxy materials to manufacturers and researchers around the world.

Cree has unparalleled expertise working with two high-performance materials, silicon carbide (SiC) and gallium nitride (GaN).

Applications for Cree’s SiC and GaN technology include

• Switch Mode Power Supply (SMPS)
• Hybrid vehicles
• Military communications devices
• Advanced RADAR implementations

SiC is the foremost semiconductor material for a variety of high-performance electronic devices due to its critical physical and electronic properties. (Learn more about the physical and electronic properties of SiC.)

Cree is the leading innovator in III nitride epitaxy, which, like SiC, provides many advantages in the manufacture of advanced electronic and optoelectronic devices. (Learn more about Cree's III nitride epitaxy technology.)

You can read about Cree product specifications and technology in the Materials Documentation section.

To find out how to take advantage of Cree’s materials expertise, contact us at MaterialsSales@cree.com.

• 10/15/2007
  Cree Announces Commercial Production Release of 100-mm Zero Micropipe Silicon Carbide Substrates
• 5/23/2007
  Cree Demonstrates 100-mm Zero-Micropipe Silicon Carbide Substrates
• 6/26/2006
  Cree to Acquire INTRINSIC Semiconductor